Silicon MOS spin qubits
Silicon MOS devices use gate-controlled electrons near an oxide interface.
$$H=H_{\rm orbital}+H_Z+H_{\rm valley}$$
Physical intuition
Silicon MOS devices use gate-controlled electrons near an oxide interface.
Deep dive: physical mechanism
Gate stacks confine electrons, while interface chemistry shapes orbital and valley physics.
What is measured experimentally?
Charge diagrams, ESR and valley spectroscopy assess devices.
Assumptions, noise and limitations
Interface roughness and oxide traps cause variability.
Research and simulation exercise
Build a simple MOS-dot energy-level diagram.
Connect the ideas
Explore the chapter overview, learning path, and references.