Si/SiGe heterostructures
Strained silicon quantum wells host low-disorder electron dots.
$$E_{\rm orb}\propto\frac{\hbar^2}{m^*L^2}$$
Physical intuition
Strained silicon quantum wells host low-disorder electron dots.
Deep dive: physical mechanism
Band offsets confine carriers in silicon while SiGe barriers and surface gates define dots.
What is measured experimentally?
Mobility, charge sensing and spin coherence characterize the platform.
Assumptions, noise and limitations
Residual valley degeneracy and alloy disorder matter.
Research and simulation exercise
Compare dot confinement with different well widths.
Connect the ideas
Explore the chapter overview, learning path, and references.